Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates

Solid-State Electronics

Volumn 53, Issue 10, 2009, Pages 1135-1143

  Arimoto, Keisuke ^a   Watanabe, Masato ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Sawano, Kentarou ^b   Shiraki, Yasuhiro ^b   Usami, Noritaka ^c   Nakajima, Kazuo ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Molecular beam epitaxy; SiGe

Indexed keywords

ATOMIC FORCE MICROSCOPES; CRYSTALLINE MORPHOLOGIES; GAS-SOURCE MOLECULAR BEAM EPITAXY; GRADED BUFFER; GRADED LAYERS; GROWTH METHOD; SCANNING TRANSMISSION ELECTRON MICROSCOPES; SI-GE FILMS; SIGE; SIGE LAYERS; STRAIN RELAXATION MECHANISM;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; MICROSCOPES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MORPHOLOGY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON ALLOYS; STRAIN CONTROL; STRAIN RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68349141660     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.05.010     Document Type: Article

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