SCOPUS 정보 검색 플랫폼

Applied Spectroscopy

Volumn 56, Issue 5, 2002, Pages 560-563

Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage

(3) Bonera, E a Fanciulli, M a Batchelder, D N a

a LABORATORIO MDM (Italy)

Author keywords

Confocal Raman; Microelectronics; Stress

Indexed keywords

BACKSCATTERING; CHARGE COUPLED DEVICES; COMPUTER SIMULATION; MICROSCOPIC EXAMINATION; MONOCHROMATORS; OXIDATION; PHOTONS; SEMICONDUCTING SILICON; SPECTROMETERS; STRESSES; ULTRAVIOLET RADIATION;

LOCALIZED OXIDATION OF SILICON; RAMAN MICROSCOPE; RAMAN SPECTROMETER; SINGLE MONOCHROMATOR RAMAN SPECTROMETER; STRESS MAPPING;

RAMAN SPECTROSCOPY;

EID: 0036575102 PISSN: 00037028 EISSN: None Source Type: Journal
DOI: 10.1366/0003702021955312 Document Type: Article

Times cited : (18)

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