The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formation

Journal of Raman Spectroscopy

Volumn 40, Issue 12, 2009, Pages 1881-1884

  Das, C R ^a   Dhara, S ^a,b   Hsu, H C ^c   Chen, L C ^c   Jeng, Y R ^d   Bhaduri, A K ^a   Raj, Baldev ^a   Chen, K H ^c,e   Albert, S K ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^e INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

Dislocation; GaN; Indentation; Raman spectroscopy; Recrystallization

Indexed keywords

DEFECTS; DYNAMICS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDENTATION; RECRYSTALLIZATION (METALLURGY); STRESSES;

ATOMISTICS; DEFECTS FORMATION; DISLOCATION; DYNAMIC STRESS FIELDS; DYNAMIC STUDIES; GAN FILM; MICRO-RAMAN; PLANAR DEFECT; RECRYSTALLISATION; RECRYSTALLIZATION PROCESS;

RAMAN SPECTROSCOPY;

EID: 72249123417     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2336     Document Type: Article

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