Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1653-1657

  Burgaud, P ^a   Constancias, L ^a   Martel, G ^a   Savina, C ^a   Mesnager, D ^a  

^a CELAR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRONIC WARFARE; FAILURE ANALYSIS; MICROWAVE DEVICES; MILITARY APPLICATIONS; RADAR; RELIABILITY ANALYSIS;

MILITARY RADAR APPLICATION; RELIABILITY ASSESSMENT; WIRELESS BASESTATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548682570     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.017     Document Type: Article

References (8)

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3. Ui Nohiriko et al. A 100 W class-E GaN HEMT with 75% drain efficiency at 2 GHz. In: EuMIC-2006; September 2006, Manchester, UK, p. 72-4.
4. Singhal S., et al. Reliability of large periphery GaN-on-Si HFETS. Microelectron Reliab 46 (2006) 1247-1253
5. Moreau C., et al. A complete RF power technology assessment for military application. Microelectron Reliab 46 (2006) 1817-1822
6. Singhal S et al, GaN-on-Si failure mechanisms and reliability improvements, In: IEEE 06CH37728 44th annual reliability physics symposium, San Jose; 2006, p. 95-8.
7. Binary S.C. Trapping effects in GaN and SiC microwave FETs. Proc IEEE 90 6 (2002)
8. Binari S.C., et al. Trapping effects and microwave performance in AlGaN/GaN HEMTs. IEE Trans Electron Dev 48 3 (2001)