Role of silicon in silicon-indium-zinc-oxide thin-film transistor

Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

  Chong, Eugene ^a,b   Kim, Seung Han ^a,c   Lee, Sang Yeol ^a,b  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; CHANNEL LAYERS; COMPOSITION RATIO; INDIUM ZINC OXIDES; LATTICE STRUCTURES; LOW TEMPERATURES; OXYGEN BONDING; SI CONCENTRATION; SILICON EFFECT; TIME OF FLIGHT;

AMORPHOUS FILMS; ELECTRIC POTENTIAL; INDIUM; OXIDE FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

AMORPHOUS SILICON;

EID: 78650723416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530453     Document Type: Article

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