The end of the CMOS roadmap - New landscape beyond

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 363-368

  Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

CMOS; Limits; MOSFET; Silicon; Single electron devices

Indexed keywords

CMOS INTEGRATED CIRCUITS; COSTS; MOSFET DEVICES; POWER INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES;

POWER CONSUMPTION;

MATERIALS SCIENCE;

SEMICONDUCTOR;

EID: 0037006008     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00419-2     Document Type: Article

References (10)

1. Fundamental physical limitations in integrated electronic circuits
2. Physical limits in digital electronics
3. The future of interconnection technology
4. A 20 nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source an drain and BF2 pockets
5. Vertical sidewall transistors with 50 nm channel length
6. 50 nm vertical sidewall transistors with high doping concentrations
7. Sub 50 nm FinFET
8. Size dependence of the characteristics of Si single electron transistors on SIMOX substrates