Carrier profiling of individual si nanowires by scanning spreading resistance microscopy

Nano Letters

Volumn 10, Issue 1, 2010, Pages 171-175

  Ou, Xin ^a,b,c   Kanungo, Pratyush Das ^a   Kögler, Reinhard ^b   Werner, Peter ^a   Gösele, Ulrich ^a   Skorupa, Wolfgang ^b   Wang, Xi ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Carrier profile; Doping; Implantation; Nanowire; SSRM

Indexed keywords

ACTIVATION RATES; BORON ATOM; BORON-DOPED; CARRIER PROFILE; CARRIER PROFILING; CORE-SHELL; CROSS SECTION; DOPANT INCORPORATION; IN-SITU; PHOSPHORUS ATOM; PHOSPHORUS-DOPED; SCANNING SPREADING RESISTANCE MICROSCOPY; SI NANOWIRE; SI SUBSTRATES; SILICON NANOWIRES; SPREADING RESISTANCE; THREE-DIMENSIONAL MEASUREMENTS;

BIOACTIVITY; BORON; DOPING (ADDITIVES); ION BOMBARDMENT; ION IMPLANTATION; NANOWIRES; PHOSPHORUS; THREE DIMENSIONAL;

CARRIER CONCENTRATION;

EID: 74849096146     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl903228s     Document Type: Article

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