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Applied Physics Letters

Volumn 73, Issue 19, 1998, Pages 2802-2804

Yellow luminescence depth profiling on GaN epifilms using reactive ion etching

(6) Tu, L W a Lee, Y C a Chen, S J a Lo, I a Stocker, D b Schubert, E F b

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b Boston University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001172333 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122595 Document Type: Article

Times cited : (29)

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