SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 4, 2011, Pages

Impact of SF6 plasma treatment on performance of TaN- HfO 2-InP metal-oxide-semiconductor field-effect transistor

(6) Wang, Yanzhen a Chen, Yen Ting a Zhao, Han a Xue, Fei a Zhou, Fei a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BULK OXIDES; CHANNEL MOBILITY; CONTROL DEVICE; DRIVE CURRENTS; GATE LEAKAGES; INP; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PLASMA TREATMENT; SUBTHRESHOLD SWING;

DIELECTRIC DEVICES; FLUORINE; HAFNIUM; HAFNIUM COMPOUNDS; MOSFET DEVICES; PLASMA APPLICATIONS; PLASMAS; SULFUR HEXAFLUORIDE; TANTALUM COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 79551625664 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549197 Document Type: Article

Times cited : (13)

References (19)

1
- 41749086201
- High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
- DOI 10.1109/LED.2008.917817
- Y. Xuan, Y. Wu, and P. Ye, IEEE Electron Device Lett. 0741-3106 29, 294 (2008). 10.1109/LED.2008.917817 (Pubitemid 351486762)
- (2008) IEEE Electron Device Letters , vol.29 , Issue.4 , pp. 294-296
- Xuan, Y.¹ Wu, Y.Q.² Ye, P.D.³

2
- 46049101000
- 0003-6951, 10.1063/1.2943186
- H. Zhao, D. Shahrjerdi, F. Zhu, H. Kim, I. Ok, M. Zhang, J. Yum, S. Banerjee, and J. C. Lee, Appl. Phys. Lett. 0003-6951 92, 253506 (2008). 10.1063/1.2943186
- (2008) Appl. Phys. Lett. , vol.92 , pp. 253506
- Zhao, H.¹ Shahrjerdi, D.² Zhu, F.³ Kim, H.⁴ Ok, I.⁵ Zhang, M.⁶ Yum, J.⁷ Banerjee, S.⁸ Lee, J.C.⁹

3
- 34547210682
- Enhancement-mode InP n -channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2 O3 dielectrics
- DOI 10.1063/1.2756106
- Y. Wu, Y. Xuan, T. Shen, P. D. Ye, Z. Cheng, and A. Lochtefeld, Appl. Phys. Lett. 0003-6951 91, 022108 (2007). 10.1063/1.2756106 (Pubitemid 47114735)
- (2007) Applied Physics Letters , vol.91 , Issue.2 , pp. 022108
- Wu, Y.Q.¹ Xuan, Y.² Shen, T.³ Ye, P.D.⁴ Cheng, Z.⁵ Lochtefeld, A.⁶

4
- 29144509765
- 3
- DOI 10.1063/1.2146060, 252104
- M. Huang, Y. Chang, C. Chang, Y. Lee, P. Chang, J. Kwo, T. Wu, and M. Hong, Appl. Phys. Lett. 0003-6951 87, 252104 (2005). 10.1063/1.2146060 (Pubitemid 41816133)
- (2005) Applied Physics Letters , vol.87 , Issue.25 , pp. 1-3
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lee, Y.J.⁴ Chang, P.⁵ Kwo, J.⁶ Wu, T.B.⁷ Hong, M.⁸

5
- 0031075990
- 0018-9383, 10.1109/16.557709
- M. Passlack, M. Hong, J. Mannaerts, R. Opila, S. Chu, N. Moriya, and F. Ren, IEEE Trans. Electron Devices 0018-9383 44, 214 (1997). 10.1109/16.557709
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 214
- Passlack, M.¹ Hong, M.² Mannaerts, J.³ Opila, R.⁴ Chu, S.⁵ Moriya, N.⁶ Ren, F.⁷

6
- 0033583043
- Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
- DOI 10.1126/science.283.5409.1897
- M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 0036-8075 283, 1897 (1999). 10.1126/science.283.5409.1897 (Pubitemid 29144203)
- (1999) Science , vol.283 , Issue.5409 , pp. 1897-1900
- Hong, M.¹ Kwo, J.² Kortan, A.R.³ Mannaerts, J.P.⁴ Sergent, A.M.⁵

7
- 50249172840
- 0163-1918
- M. Passlack, P. Zurcher, K. Rajagopalan, R. Droopad, J. Abrokwah, M. Tutt, Y. -B. Park, E. Johnson, O. Hartin, A. Zlotnicka, P. Fejes, R. J. W. Hill, D. A. J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thorns, A. Asenov, K. Kalna, and I. G. Thayne, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 621.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 621
- Passlack, M.¹ Zurcher, P.² Rajagopalan, K.³ Droopad, R.⁴ Abrokwah, J.⁵ Tutt, M.⁶ Park, Y.-B.⁷ Johnson, E.⁸ Hartin, O.⁹ Zlotnicka, A.¹⁰ Fejes, P.¹¹ Hill, R.J.W.¹² Moran, D.A.J.¹³ Li, X.¹⁴ Zhou, H.¹⁵ MacIntyre, D.¹⁶ Thorns, S.¹⁷ Asenov, A.¹⁸ Kalna, K.¹⁹ Thayne, I.G.²⁰ more..

8
- 50249144058
- 0163-1918
- Y. Xuan, Y. Wu, T. Shen, T. Yang, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 637.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 637
- Xuan, Y.¹ Wu, Y.² Shen, T.³ Yang, T.⁴ Ye, P.D.⁵

9
- 64849104717
- (IEEE, New York)
- S. Koveshnikov, N. Goel, P. Majhi, C. Gaspe, M. Santos, S. Oktyabrsky, V. Tokranov, M. Yakimov, R. Kambhampati, H. Bakhru, F. Zhu, J. C. Lee, and W. Tsai, Proceedings of the 66th IEEE Device Research Conference (IEEE, New York, 2008), p. 43.
- (2008) Proceedings of the 66th IEEE Device Research Conference , pp. 43
- Koveshnikov, S.¹ Goel, N.² Majhi, P.³ Gaspe, C.⁴ Santos, M.⁵ Oktyabrsky, S.⁶ Tokranov, V.⁷ Yakimov, M.⁸ Kambhampati, R.⁹ Bakhru, H.¹⁰ Zhu, F.¹¹ Lee, J.C.¹² Tsai, W.¹³

10
- 44849083052
- 0003-6951, 10.1063/1.2931031
- S. Koveshnikov, N. Goel, P. Majhi, H. Wen, M. B. Santos, S. Oktyabrsky, V. Tokranov, R. Kambhampati, R. Moore, F. Zhu, J. Lee, and W. Tsai, Appl. Phys. Lett. 0003-6951 92, 222904 (2008). 10.1063/1.2931031
- (2008) Appl. Phys. Lett. , vol.92 , pp. 222904
- Koveshnikov, S.¹ Goel, N.² Majhi, P.³ Wen, H.⁴ Santos, M.B.⁵ Oktyabrsky, S.⁶ Tokranov, V.⁷ Kambhampati, R.⁸ Moore, R.⁹ Zhu, F.¹⁰ Lee, J.¹¹ Tsai, W.¹²

11
- 0033332380
- 0021-4922, 10.1143/JJAP.38.L1512
- S. Morikita, T. Motegi, and H. Ikoma, Jpn. J. Appl. Phys., Part 2 0021-4922 38, L1512 (1999). 10.1143/JJAP.38.L1512
- (1999) Jpn. J. Appl. Phys., Part 2 , vol.38 , pp. 1512
- Morikita, S.¹ Motegi, T.² Ikoma, H.³

12
- 59649110836
- 0741-3106, 10.1109/LED.2008.2010831
- H. -C. Chin, M. Zhu, X. Liu, H. -K. Lee, L. Shi, L. -S. Tan, and Y. -C. Yeo, IEEE Electron Device Lett. 0741-3106 30, 110 (2009). 10.1109/LED.2008. 2010831
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 110
- Chin, H.-C.¹ Zhu, M.² Liu, X.³ Lee, H.-K.⁴ Shi, L.⁵ Tan, L.-S.⁶ Yeo, Y.-C.⁷

13
- 44349146000
- 2 and silicon interface passivation layer
- DOI 10.1063/1.2920438
- I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, D. Garcia, P. Majhi, N. Goel, W. Tsai, C. Gaspe, M. Santos, and J. Lee, Appl. Phys. Lett. 0003-6951 92, 202903 (2008). 10.1063/1.2920438 (Pubitemid 351733913)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202903
- Ok, I.¹ Kim, H.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Garcia, D.⁸ Majhi, P.⁹ Goel, N.¹⁰ Tsai, W.¹¹ Gaspe, C.K.¹² Santos, M.B.¹³ Lee, J.C.¹⁴

14
- 51749110431
- 0003-6951, 10.1063/1.2961119
- H. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, and J. Lee, Appl. Phys. Lett. 0003-6951 93, 102906 (2008). 10.1063/1.2961119
- (2008) Appl. Phys. Lett. , vol.93 , pp. 102906
- Kim, H.¹ Ok, I.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.⁸

15
- 67650369791
- 0163-1918
- W. Wu, C. Lai, S. Lee, M. Ma, T. Chao, J. Wang, C. Hsu, P. Chou, J. Chen, K. Kao, W. Lo, T. Lu, L. Tay, and N. Rowell, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 405.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 405
- Wu, W.¹ Lai, C.² Lee, S.³ Ma, M.⁴ Chao, T.⁵ Wang, J.⁶ Hsu, C.⁷ Chou, P.⁸ Chen, J.⁹ Kao, K.¹⁰ Lo, W.¹¹ Lu, T.¹² Tay, L.¹³ Rowell, N.¹⁴

16
- 42549119927
- High- k gate stack on germanium substrate with fluorine incorporation
- DOI 10.1063/1.2913048
- R. Xie, M. Yu, M. Lai, L. Chan, and C. Zhu, Appl. Phys. Lett. 0003-6951 92, 163505 (2008). 10.1063/1.2913048 (Pubitemid 351590750)
- (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 163505
- Xie, R.¹ Yu, M.² Lai, M.Y.³ Chan, L.⁴ Zhu, C.⁵

17
- 76349118593
- 0013-4651, 10.1149/1.3273197
- Y. Chen, H. Zhao, J. Yum, Y. Wang, F. Xue, F. Zhou, and J. C. Lee, J. Electrochem. Soc. 0013-4651 157, G71 (2010). 10.1149/1.3273197
- (2010) J. Electrochem. Soc. , vol.157 , pp. 71
- Chen, Y.¹ Zhao, H.² Yum, J.³ Wang, Y.⁴ Xue, F.⁵ Zhou, F.⁶ Lee, J.C.⁷

18
- 67650491261
- 0003-6951, 10.1063/1.3173820
- Y. Chen, H. Zhao, J. Yum, Y. Wang, F. Xue, F. Zhou, and J. C. Lee, Appl. Phys. Lett. 0003-6951 95, 013501 (2009). 10.1063/1.3173820
- (2009) Appl. Phys. Lett. , vol.95 , pp. 013501
- Chen, Y.¹ Zhao, H.² Yum, J.³ Wang, Y.⁴ Xue, F.⁵ Zhou, F.⁶ Lee, J.C.⁷

19
- 69249212137
- 0042-207X, 10.1016/j.vacuum.2009.04.032
- G. Vanko, T. Lalinsk, Š. Haščík, I. Rger, Ž. Mozolová, J. Škriniarová, M. Tomáš ka, I. Kostič, and A. Vincze, Vacuum 0042-207X 84, 235 (2009). 10.1016/j.vacuum.2009.04.032
- (2009) Vacuum , vol.84 , pp. 235
- Vanko, G.¹ Lalinsk, T.² Haščík, Š.³ Rger, I.⁴ Mozolová, Ž.⁵ Škriniarová, J.⁶ Tomáška, M.⁷ Kostič, I.⁸ Vincze, A.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.