Study of the erase mechanism of MANOS (Metal/Al2O3/ SiN/SiO2/Si) device

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 643-645

  Lai, Sheng Chin ^a,b   Lue, Hang Ting ^a   Hsieh, Jong Yu ^a,b   Yang, Ming Jui ^c   Chiou, Yan Kai ^b   Wu, Chia Wei ^a   Wu, Tai Bor ^b   Luo, Guang Li ^c   Chien, Chao Hsin ^c   Lai, Erh Kun ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Al2O3 blocking layer; Metal Al2O3 nitride oxide silicon (MANOS); Metal oxide nitride oxide semiconductor (MONOS); Refill test; Transient analysis

Indexed keywords

ELECTRON DETRAPPING MECHANISM; ERASE MECHANISM; HOLE INJECTION MODEL; METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR;

ELECTRIC CURRENTS; HOLE MOBILITY; INTERFACES (MATERIALS); NITRIDES; TRANSIENT ANALYSIS;

MOS DEVICES;

EID: 34447254561     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899993     Document Type: Article

References (7)

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