Effect of annealing on conductivity behavior of undoped zinc oxide prepared by rf magnetron sputtering

Journal of Alloys and Compounds

Volumn 457, Issue 1-2, 2008, Pages 36-41

  Xing, G Z ^a   Yao, B ^a,b   Cong, C X ^a   Yang, T ^a   Xie, Y P ^a   Li, B H ^b   Shen, D Z ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Annealing; Photoluminescence; ZnO films

Indexed keywords

ANNEALING; MAGNETRON SPUTTERING; METALLIC FILMS; PHOTOLUMINESCENCE;

RF MAGNETRON SPUTTERING; SPUTTERING GAS;

ZINC OXIDE;

EID: 42649124030     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.03.071     Document Type: Article

References (24)

1. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270
2. Zhang S.B., Wei S.H., and Zunger A. Phys. Rev. B 63 (2001) 075205
3. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
4. Yao B., Shen D.Z., Zhang Z.Z., Wang X.H., Wei Z.P., Li B.H., Lv Y.M., Fan X.W., Guan L.X., Xing G.Z., Cong C.X., and Xie Y.P. J. Appl. Phys. 99 (2006) 123510
5. Hwang D.K., Kim H.S., Lim J.H., Oh J.Y., Yang J.H., Park S.J., Kim K.K., Look D.C., and Park Y.S. Appl. Phys. Lett. 86 (2005) 151917
6. Vaithianathan V., Lee B.T., and Kim S.S. Appl. Phys. Lett. 86 (2005) 62101
7. Look D.C., Renlund G.M., Burgener II R.H., and Sizelove J.R. Appl. Phys. Lett. 85 (2004) 5269
8. Zeng Y.J., Ye Z.Z., Xu W.Z., Li D.Y., Lu J.G., Zhu L.P., and Zhao B.H. Appl. Phys. Lett. 88 (2004) 062107
9. Yamamoto T., and Yoshida H.K. Jpn. J. Appl. Phys. 38 (1999) L166
10. Nakahara K., Takasu H., Fons P., Yamada A., Iwata K., Matsubara K., Hunger R., and Niki S. Appl. Phys. Lett. 79 (2001) 4139
11. Tsukazaki A., Saito H., Tamura K., Ohtani M., Koinuma H., Sumiya M., Fuke S., Fukumura T., and Kawasaki M. Appl. Phys. Lett. 81 (2002) 235
12. Xiong G., Wilkinson J., Mischuck B., Tüzemen S., Ucer K.B., and Williams R.T. Appl. Phys. Lett. 80 (2002) 1195
13. Ma Y., Du G.T., Yang S.R., Li Z.T., Zhao B.J., Yang X.T., Yang T.P., Zhang Y.T., and Liu D.L. J. Appl. Phys. 95 (2004) 6268
14. Oh M.S., Kim S.H., and Seong T.Y. Appl. Phys. Lett. 87 (2005) 122103
15. Zeng Y.J., Ye Z.Z., Xu W.Z., Lu J.G., He H.P., Zhu L.P., Zhao B.H., Che Y., and Zhang S.B. Appl. Phys. Lett. 88 (2006) 262103
16. van der Pauw L.J. Philips Res. Rep. 13 (1958) 1
17. Albertsson J., Abrahams S.C., and Kvick A. Acta Crystallogr., Sect. B: Struct. Sci. 45 (1989) 34
18. Zu P., Tang Z.K., Wong G.K.L., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Solid State Commun. 103 (1997) 459
19. Jeong S.H., Kim B.S., and Lee B.T. Appl. Phys. Lett. 82 (2003) 2625
20. Vanheusden K., Warren W.L., Seager C.H., Tallant D.R., Voigt J.A., and Gnade B.E. J. Appl. Phys. 79 (2004) 7983
21. Jen F.Y., Lu Y.C., Chen C.Y., Wang H.C., Yang C.C., Zhang B.P., and Segawa Y. Appl. Phys. Lett. 87 (2005) 252117
22. Reynolds D.C., Look D.C., Jogai B., Litton C.W., Collins T.C., Harsch W., and Cantwell G. Phys. Rev. B 57 (2001) 12151
23. Teke A., Özgür U., Dogan S., Gu X., Morkoç H., Nemeth B., Nause J., and Everitt H.O. Phys. Rev. B 70 (2004) 195207
24. Wu X.L., Siu G.G., Fu C.L., and Ong H.C. Appl. Phys. Lett. 78 (2001) 2285