Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

IEEE Transactions on Device and Materials Reliability

Volumn 11, Issue 2, 2011, Pages 295-302

  Dixit, Vijay Kumar ^a   Neishi, Koji ^b   Akao, Noboru ^b   Koike, Junichi ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition (CVD); diffusion barrier; interconnect; manganese oxide; metal oxide semiconductor (MOS) capacitors

Indexed keywords

BARRIER MATERIAL; BIAS TEMPERATURE; DIFFUSION BARRIER LAYERS; FLAT-BAND VOLTAGE; INTERCONNECT; INTERCONNECT STRUCTURES; LOW-LEAKAGE CURRENT; MANGANESE PRECURSOR; METALOXIDESEMICONDUCTOR (MOS) CAPACITORS; MN OXIDES; THERMAL-ANNEALING;

DIFFUSION BARRIERS; ELECTRONIC PROPERTIES; MANGANESE; MANGANESE OXIDE; MOS CAPACITORS; SEMICONDUCTING SILICON; SILICON COMPOUNDS;

CHEMICAL VAPOR DEPOSITION;

EID: 79959505954     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2011.2141671     Document Type: Article

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