Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 181-186

  Seo, Soon Cheon ^a   Yang, Chih Chao ^a   Hu, Chao Kun ^b   Kerber, Andreas ^c   Horak, David ^a   Fan, Susan ^a   Haran, Bala ^a   Lavoie, Christian ^b   Basker, Veeraraghavan ^a   Canaperi, Donald ^a   Rao, Satyavolu S Papa ^b   Petrillo, Karen ^a   Holmes, Steven ^a   Smalley, Matthew ^a   Vo, Tuan ^a   Kelly, James ^a   Cummings, Jason ^a   Adam, Lahir ^b   Demarest, James ^a   Flaitz, Philip ^d   Ren, Zhibin ^d   Knorr, Andreas ^c   Mehta, Sanjay ^a   Koburger, Charles ^a   Park, Dae Gyu ^b   Wynne, Jean ^a   Spooner, Terry ^a   Edelstein, Daniel ^b   Paruchuri, Vamsi ^a   Doris, Bruce ^a   McHerron, Dale ^a   more..

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

32-NM NODE; 45NM NODE; BREAKDOWN TESTS; COPPER CONTACTS; CU CONTACT; CU DIFFUSION; DEPOSITION PROCESS; DEVICE PERFORMANCE; DRIVE CURRENTS; FULLY INTEGRATED; NON-HALOGEN; THERMAL ANNEALS; VOLTAGE BREAKDOWN; YIELD DEGRADATION;

CONTACT RESISTANCE; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); METALLIZING; NANOTECHNOLOGY; TANTALUM; TEST FACILITIES;

CHEMICAL VAPOR DEPOSITION;

EID: 70349956375     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. D. Edelstein et al., IITC, 9 (2001)
2. R. Islam et al., VLSI, 22 (2000)
3. S. Demuynck et al., AMC, 57 (2007)
4. G. Van den bosch et al., Proc. IEDM (2006)
5. C. C. Yang et al., IITC, 187 (2006)
6. M. Lane et al., Appl. Phys. Letters, 83, n12, 2330 (2003)
7. B. Haran et al., accepted to IEDM (2008)