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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1963-1968

Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

(4) Iijima, J a Fujii, Y a Neishi, K a Koike, J a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; BARRIER PROCESS; EXTERNAL OXIDATION; INTERCONNECT APPLICATIONS; INTERCONNECT LINES; MN ALLOY FILMS; MN ATOMS; MN OXIDES; RESISTIVITY REDUCTION;

ALLOYS; COPPER; COPPER ALLOYS; MANGANESE ALLOYS; MANGANESE COMPOUNDS; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

MANGANESE;

EID: 68349159143 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3179167 Document Type: Article

Times cited : (47)

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