RuTaN films by PEALD using N2/H2 plasma for Cu diffusion barrier layer

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 203-209

  Jeong, Daekyun ^a   Namba, Kunitoshi ^a   Inoue, Hiroaki ^a   Shinriki, Hiroshi ^a  

^a ASM Japan   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PROPERTIES; ATOMIC COMPOSITIONS; BARRIER METALS; COPPER DIFFUSION BARRIER; CU DIFFUSION BARRIER; CU FILMS; CU INTERCONNECT; HYDROGEN PLASMAS; LOW RESISTIVITY; MIXED GAS; NITROGEN COMPOSITION; NUCLEATION LAYERS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; ULTRA-THIN;

CHEMICAL VAPOR DEPOSITION; DIFFUSION BARRIERS; GAS PERMEABLE MEMBRANES; HYDROGEN; METALLIC FILMS; METALLIZING; OPTICAL INTERCONNECTS; PLASMA DEPOSITION; PLASMAS; TANTALUM COMPOUNDS;

COPPER;

EID: 70349946965     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. The International Technology Roadmap for Semiconductors 2007
2. N. Ohashi, et al. The AVS 5th Topical Conference on Atomic Layer Deposition (2005)
3. Seong Jun Jeong, Se Hun Kwon, Sang Won Kang, The AVS 6th International Conference on Atomic Layer Deposition (2006)
4. D. Jeong, H. Inoue, H. Shinriki, International Interconnect Technology Conference, IEEE, 156 (2008)