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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages

Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS- Si O2

(2) Chung, S M a Koike, J a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BARRIER LAYERS; CAPACITANCE VOLTAGE MEASUREMENTS; CU ALLOY; DIELECTRIC CONSTANTS; DIFFUSION BARRIER LAYERS; INSULATOR CAPACITANCE; INTERCONNECT LINES; MN ALLOY FILMS; NEGATIVE INFLUENCE;

CAPACITANCE; CERAMIC CAPACITORS; COPPER; DIELECTRIC WAVEGUIDES; MANGANESE; MANGANESE COMPOUNDS; PERMITTIVITY; SILICON; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

COPPER ALLOYS;

EID: 70349664429 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3224884 Document Type: Article

Times cited : (30)

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