Chemical vapor deposition (CVD) of manganese self-aligned diffusion barriers for Cu interconnections in microelectronics

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 321-329

  Gordon, Roy G ^a   Kim, Hoon ^a   Au, Yeung ^a   Wang, Hongtao ^a   Bhandari, Harish ^a   Liu, Yiqun ^a   Lee, Don Keun ^a   Lin, Youbo ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

Adhesion; Chemical vapor deposition; Copper; Diffusion barrier; Manganese

Indexed keywords

ADHESION STRENGTHS; CAPPING LAYER; COPPER SURFACE; MANGANESE PRECURSOR; MANGANESE-SILICATE; MICRO-ELECTRONIC DEVICES; SELF-ALIGNED; SEMICONDUCTOR INDUSTRY; SILICA SURFACE;

ADHESION; COPPER; DIFFUSION BARRIERS; FILM GROWTH; MANGANESE; MANGANESE COMPOUNDS; METALLIZING; MICROELECTRONICS; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SILICA; SILICATES; WATER VAPOR;

CHEMICAL VAPOR DEPOSITION;

EID: 70349952027     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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