Bias-temperature stability of the Cu(Mg)/SiO2/p-Si metal-oxide-semiconductor capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 1987-1989

  Suwwan De Felipe, T ^a   Murarka, S P ^a   Bedell, S ^b   Lanford, W A ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ANNEALING; COPPER; COPPER ALLOYS; DIFFUSION; ELECTRIC FIELD EFFECTS; MAGNESIUM; MOS DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; THERMODYNAMIC STABILITY;

BIAS TEMPERATURE AGING; COPPER MAGNESIUM ALLOYS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031274562     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. S. P. Murarka, Metallization-Theory and Practice for VLSI and ULSI (Butterworth-Heineman, Boston, 1993).
2. S. P. Murarka, Conference Proceedings of VLSI VI, 1991 (Materials Research Society, Pittsburgh, 1991), p. 179.
3. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem. Soc. 133, 1242 (1986).
4. A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973).
5. W. A. Lanford, P. J. Ding, W. Wang, S. Hymes, and S. P. Murarka, Thin Solid Films 262, 234 (1995).
6. T. Takewaki, R. Kaihara, T. Ohmi, and T. Nitta, Proceeding of IEEE-IEDM, 1995 (IEEE, Washington, DC, 1995), p. 249.
7. P. J. Ding, W. A. Lanford, S. Hymes, and S. P. Murarka, Appl. Phys. Lett. 64, 2897 (1994).