Green/red electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth organic compounds on silicon

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 1, 2011, Pages

  Ohzone, Takashi ^a   Matsuda, Toshihiro ^b   Hase, Souta ^b   Nohara, Shingo ^b   Iwata, Hideyuki ^b  

^a Dawn Enterprise Co Ltd   (Japan)

^b TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; FOWLER-NORDHEIM TUNNELS; INDIUM TIN OXIDE; INTRA-SHELL TRANSITION; METAL OXIDE SEMICONDUCTOR; ORGANIC LIQUID; OXIDE LAYER; SI SUBSTRATES;

BARIUM; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTROLUMINESCENCE; EUROPIUM; INDIUM COMPOUNDS; MOS DEVICES; RARE EARTH COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICES; SILICON; SILICON COMPOUNDS; TERBIUM; TIN; TIN OXIDES;

SEMICONDUCTING SILICON;

EID: 79959449048     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.064102     Document Type: Article

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