Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 499-504

  Gebel, T ^a,b   Rebohle, L ^b,c   Sun, J ^a   Skorupa, W ^a,b   Nazarov, A N ^d   Osiyuk, I ^d  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Charge trapping; Electroluminescence; Ion implantation; Nanocluster rich oxides

Indexed keywords

CAPACITANCE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TRAPS; GERMANIUM; ION IMPLANTATION; LIGHT EMISSION; NITROGEN; RAPID THERMAL ANNEALING; SILICA;

CHARGE TRAPPING;

MICROELECTRONICS;

EID: 0037373038     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00636-7     Document Type: Conference Paper

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