-
1
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl. Phys. Lett., 1990, 57: 1046.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 1046
-
-
Canham, L.T.1
-
2
-
-
0000703152
-
Unusually low surface-recombination velocity on silicon and germanium surface
-
Yablonovitch E. Unusually low surface-recombination velocity on silicon and germanium surface[J]. Phys. Rev. Lett., 1986, 57: 249.
-
(1986)
Phys. Rev. Lett.
, vol.57
, pp. 249
-
-
Yablonovitch, E.1
-
4
-
-
1542274587
-
High efficiency light emission devices in silicon
-
Castagna M E, Coffa S, Monaco M, et al. High efficiency light Emission Devices in Silicon[M]. MRS proceeding, 2003, 770, I2.1.1.
-
(2003)
MRS Proceeding
, vol.770
-
-
Castagna, M.E.1
Coffa, S.2
Monaco, M.3
-
5
-
-
31144470704
-
Photonic-crystal silicon-nanocluster light-emitting device
-
Presti C D, Irrera A, Franzo G, et al. Photonic-crystal silicon-nanocluster light-emitting device[J]. Appl. Phys. Lett., 2006, 88: 033501.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 033501
-
-
Presti, C.D.1
Irrera, A.2
Franzo, G.3
-
6
-
-
14344257465
-
A continuous-wave Raman silicon laser
-
Rong H, Jones R, Liu A, et al. A continuous-wave raman silicon laser[J]. Nature, 2005, 433: 725.
-
(2005)
Nature
, vol.433
, pp. 725
-
-
Rong, H.1
Jones, R.2
Liu, A.3
-
10
-
-
0032642271
-
Structural and optical properties of terbium oxide nanoparticles
-
Wakefield G, Keron H A, Dobson P J, et al. Structural and optical properties of terbium oxide nanoparticles[J]. J. Phys. Chem. Solids, 1999, 60: 503.
-
(1999)
J. Phys. Chem. Solids
, vol.60
, pp. 503
-
-
Wakefield, G.1
Keron, H.A.2
Dobson, P.J.3
-
11
-
-
9744229210
-
Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal-oxide-semiconductor device
-
Sun J M, Skorupa W, Dekorsy T, et al. Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal-oxide-semiconductor device[J]. Appl. Phys. Lett., 2004, 85: 3387.
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 3387
-
-
Sun, J.M.1
Skorupa, W.2
Dekorsy, T.3
-
12
-
-
3042825317
-
3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping
-
3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping[J]. Appl. Phys. Lett., 2004, 84: 4379.
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 4379
-
-
Seo, S.-Y.1
Shin, J.H.2
-
13
-
-
0033513911
-
Luminescence from Er and Tb implanted into MOS tunnel diodes
-
Wang S, Amekura H, Eckau A, et al. Luminescence from Er and Tb implanted into MOS tunnel diodes[J]. Nuclear Instruments and Methods in Physics Research B, 1999, 148: 481.
-
(1999)
Nuclear Instruments and Methods in Physics Research B
, vol.148
, pp. 481
-
-
Wang, S.1
Amekura, H.2
Eckau, A.3
-
15
-
-
0006412205
-
Erbium implanted thin film photonic materials
-
Polman A. Erbium implanted thin film photonic materials[J]. J. Appl. Phys., 1997, 82: 1.
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 1
-
-
Polman, A.1
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