Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers

Journal of Applied Physics

Volumn 99, Issue 10, 2006, Pages

  Sun, J M ^a   Prucnal, S ^a   Skorupa, W ^a   Dekorsy, T ^a,c   Muchlich A ^a   Helm, M ^a   Rebohle, L ^b   Gebel, T ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH   (Germany)

^c UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRON TRAPS; ELECTRONS; GADOLINIUM; INDIUM COMPOUNDS; MOS DEVICES; QUANTUM EFFICIENCY; QUENCHING; SILICON COMPOUNDS; ULTRAVIOLET RADIATION;

ANNEALING TEMPERATURE; CLUSTERING; GATE OXIDE LAYERS; HOT ELECTRONS; POWER DENSITY;

ELECTROLUMINESCENCE;

EID: 33744822500     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2197247     Document Type: Article

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