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Volumn 99, Issue 10, 2006, Pages
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Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers
b
Nanoparc GmbH
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMS;
ELECTRON TRAPS;
ELECTRONS;
GADOLINIUM;
INDIUM COMPOUNDS;
MOS DEVICES;
QUANTUM EFFICIENCY;
QUENCHING;
SILICON COMPOUNDS;
ULTRAVIOLET RADIATION;
ANNEALING TEMPERATURE;
CLUSTERING;
GATE OXIDE LAYERS;
HOT ELECTRONS;
POWER DENSITY;
ELECTROLUMINESCENCE;
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EID: 33744822500
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2197247 Document Type: Article |
Times cited : (39)
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References (14)
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