Physical and memory characteristics of atomic-layer-deposited high-κ hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Japanese Journal of Applied Physics

Volumn 48, Issue 5 PART 2, 2009, Pages

  Das, Atanu ^a   Maikap, Siddheswar ^a   Li, Wei Chih ^b   Chang, Liann Be ^a   Yang, Jer Ren ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CHARGE CONFINEMENT; GATE VOLTAGES; HIGH DENSITY; HIGH-TEMPERATURE ANNEALING; LARGE HYSTERESIS; MEMORY WINDOW; METAL GATE; OXIDE NANOCRYSTALS; RETENTION TIME; SMALL-DIAMETER;

ALUMINA; ALUMINUM; CAPACITANCE; CAPACITORS; HAFNIUM; HAFNIUM COMPOUNDS; HYSTERESIS; IRIDIUM; NANOCRYSTALS; SILICON COMPOUNDS; WINDOWS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 70249142512     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.05DF02     Document Type: Article

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