Characteristics of nano-floating-gate memory with Au nanoparticles in SiO2 dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6202-6204

  Lee, Min Seung ^a,b   Lee, Dong Uk ^a   Kim, Jae Hoon ^a   Kim, Eun Kyu ^a   Kim, Won Mok ^b   Cho, Won Ju ^c  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

Au SiO2; Nano floating gate memory; Nanoparticle; Nonvolatile memory

Indexed keywords

DIELECTRIC MATERIALS; GOLD; SILICA; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; THICKNESS MEASUREMENT; THIN FILMS;

NANO-FLOATING-GATE MEMORY; NONVOLATILE MEMORY; OXIDE LAYERS; SPUTTERING THICKNESS;

NANOPARTICLES;

EID: 34648829978     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6202     Document Type: Article

References (9)

1. K. Han, I. Kim, and H. Shin: IEEE Trans. Electron Devices 48 (2001) 874.
2. Y. Shi, K. Saito, H. Ishikuro, and T. Hiramotob: J. Appl. Phys. 84 (1998) 2358.
3. G. Puzzilli and F. Irrera: IEEE Trans. Electron Devices 53 (2006) 775.
4. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan: Appl. Phys. Lett. 68 (1996) 1377.
5. J. A. Wahl, H. Silva, A. Gokirmak, A. Kumar, J. J. Welser, and S. Tiwari: IEDM Tech. Dig., 1999, p. 375.
6. M. Carrara, J. J. Kakkassery, J.-P. Abid, and D. J. Fermin: ChemPhysChem. 5 (2004) 571.
7. M. S. Lee, J. H. Kim, E. K. Kim, and W. M. Kim: J. Korean Phys. Soc. 48 (2006) 1552.
8. W.-J. Cho, C.-G. Ahn, K. Im, J.-H. Yang, J. Oh, I.-B. Baek, and S. Lee: IEEE Electron Device Lett. 25 (2004) 366.
9. D. U. Lee, M. S. Lee, J.-H. Kim, E. K. Kim, H.-M. Koo, W.-J. Cho, and W. M. Kim.: Appl. Phys. Lett. 90 (2007) 093514.