Fabrication of nanochannels with high aspect ratios on a silicon substrate by local focused ion beam implantation and deep reactive ion etching

Japanese Journal of Applied Physics

Volumn 49, Issue 6 PART 2, 2010, Pages

  Han, Jin ^a   Kim, Tae Gon ^a   Min, Byung Kwon ^a   Lee, Sang Jo ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL PATTERN; DEEP REACTIVE ION ETCHING; DIRECT WRITING; DRIE PROCESS; FABRICATION PROCESS; HIGH ASPECT RATIO; ION IMPLANTATION METHODS; MASK FABRICATION; METAL MASKS; NANO CHANNELS; PROCESS CONDITION; SILICON SUBSTRATES;

ASPECT RATIO; FABRICATION; FOCUSED ION BEAMS; ION IMPLANTATION; MASKS; PHOTORESISTS; PRESSURE DROP;

REACTIVE ION ETCHING;

EID: 77955322814     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.06GK04     Document Type: Article

References (15)

1. S. Hashioka, C.-H. Chang, K. Masu, and Y. Horiike: Jpn. J. Appl. Phys. 47 (2008) 3214.
2. P. Mao and H. Jongyoon: Lab Chip 9 (2009) 586.
3. R.-J. Yang, C.-H. Wu, T.-I. Tseng, S.-B. Huang, and G.-B. Lee: Jpn. J. Appl. Phys. 44 (2005) 7634.
4. K. D. Park, S. W. Lee, N. Takama, T. Fujii, and B. J. Kim: Microelectron. Eng. 86 (2009) 1385.
5. C. K. Harnett, G. W. Coates, and H. G. Craighead: J. Vac. Sci. Technol. B 19 (2001) 2842.
6. J. D. M. Cannon, B. R. Flachsbart, M. A. Shannon, J. V. Sweedler, and P. W. Bohn: Appl. Phys. Lett. 85 (2004) 1241.
7. X. Liang, K. J. Morton, R. H. Austin, and S. Y. Chou: Nano Lett. 7 (2007) 3774.
8. M. Mizuhata, T. Miyake, Y. Nomoto, and S. Deki: Microelectron. Eng. 85 (2008) 355.
9. J. Han, H. Lee, B.-K. Min, and S. J. Lee: Microelectron. Eng. 87 (2010) 1.
10. M. J. O'Brien Ii, P. Bisong, L. K. Ista, E. M. Rabinovich, A. L. Garcia, S. S. Sibbett, G. P. Lopez, and S. R. J. Brueck: J. Vac. Sci. Technol. B 21 (2003) 2941.
11. R. Sbiaa, E. L. Tan, R. M. Seoh, K. O. Aung, S. K. Wong, and S. N. Piramanayagam: J. Vac. Sci. Technol. B 26 (2008) 1666.
12. S. Benchabane, L. Robert, J.-Y. Rauch, A. Khelif, and V. Laude: J. Appl. Phys. 105 (2009) 094109.
13. N. Chekurov, K. Grigoras, A. Peltonen, S. Franssila, and I. Tittonen: Nanotechnology 20 (2009) 065307.
14. H. X. Qian, W. Zhou, J. Miao, L. E. N. Lim, and X. R. Zeng: J. Micromech. Microeng. 18 (2008) 035003.
15. K. Gamo, G. Huang, K. Moriizumi, N. Samoto, R. Shimizu, and S. Nambaa: Nucl. Instrum. Methods Phys. Res., Sect. B 7 (1985) 864.