Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers

Current Applied Physics

Volumn 10, Issue 1 SUPPL. 1, 2010, Pages e5-

  Seo, Ki Bong ^a   Lee, Dong Uk ^a   Han, Seung Jong ^a   Kim, Eun Kyu ^a   You, Hee Wook ^b   Cho, Won Ju ^b  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Engineered tunnel barrier; Nanocrystals; Nonvolatile memory device; VARIOT; WSi2

Indexed keywords

ANNEALING; MAGNETRON SPUTTERING; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE; SILICA; THRESHOLD VOLTAGE;

CHARGE RETENTION CHARACTERISTIC; NONVOLATILE MEMORY DEVICES; PHYSICAL THICKNESS; RADIO FREQUENCY MAGNETRON SPUTTERING; THRESHOLD VOLTAGE SHIFTS; TUNNEL BARRIER; VARIOT; WSI2;

TUNGSTEN COMPOUNDS;

EID: 77649232468     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2009.12.002     Document Type: Article

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