SCOPUS 정보 검색 플랫폼

Volumn 26, Issue 8, 2009, Pages

Robust low voltage program-erasable cobalt-nanocrystal memory capacitors with multistacked Al2O3/HfO 2/Al2 O3 tunnel barrier

(7) Liao, Zhong Wei a Gou, Hong Yan a Huang, Yue a Sun, Qing Qing a Ding, Shi Jin a Zhang, Wei a Zhang, Shi Li a,b

a FUDAN UNIVERSITY (China)

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; COBALT; HAFNIUM OXIDES;

ATOMIC LAYER DEPOSITED; CO NANOCRYSTALS; COBALT NANOCRYSTALS; HFO 2; LOW VOLTAGES; MEMORY WINDOW; NANOCRYSTAL MEMORY; PROGRAM ERASABLE; PROGRAM/ERASE; TUNNEL BARRIER;

NANOCRYSTALS;

EID: 68949209174 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/26/8/087303 Document Type: Article

Times cited : (3)

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