All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Journal of Physics D: Applied Physics

Volumn 44, Issue 25, 2011, Pages

  Cao, Xun ^a   Li, Xiaomin ^a   Gao, Xiangdong ^a   Liu, Xinjun ^a   Yang, Chang ^a   Yang, Rui ^a   Jin, Ping ^a,b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; MEMORY SWITCHING; MG-DOPED; RESISTANCE RANDOM ACCESS MEMORY; ROOM TEMPERATURE; VISIBLE REGION; VOLTAGE PULSE; ZNO FILMS;

ELECTRIC POTENTIAL; PULSED LASER DEPOSITION; ZINC OXIDE;

RANDOM ACCESS STORAGE;

EID: 79958816910     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/25/255104     Document Type: Article

References (32)

1. Chua L O 1971 IEEE Trans. Circuit Theory 18 507
2. Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
3. Waser R and Aono M 2007 Nature Mater. 6 833
4. Sawa A 2008 Mater. Today 11 28
5. Choi B J et al 2005 J. Appl. Phys. 98 033715
6. Seo S et al 2004 Appl. Phys. Lett. 85 5655
7. Lv H B et al 2008 IEEE Electron Device Lett. 29 47
8. Watanabe Y, Bednorz J G, Bietsch A, Gerber Ch, Widmer D, Beck A and Wind S J 2001 Appl. Phys. Lett. 78 3738
9. Dong R, Wang Q, Chen L D, Shang D S, Chen T L, Li X M and Zhang W Q 2005 Appl. Phys. Lett. 86 172107
10. Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F and Tsai M J 2008 Appl. Phys. Lett. 92 022110
11. Kim S, Moon H, Gupta D, Yoo S and Choi Y-K 2009 IEEE Trans. Electron Devices 56 696
12. Xu N et al 2008 Appl. Phys. Lett. 92 232112
13. Villafuerte M, Heluani S P, Juarez G, Simonelli G, Braunstein G and Duhalde S 2007 Appl. Phys. Lett. 90 052105
14. Chen X, Wu G and Bao D 2008 Appl. Phys. Lett. 93 093501
15. Chen X, Wu G, Jiang P, Liu W and Bao D 2009 Appl. Phys. Lett. 94 033501
16. Seo J W, Park J W, Lim K S, Yang J H and Kang S J 2008 Appl. Phys. Lett. 93 223505
17. Seo J W et al 2009 Appl. Phys. Lett. 95 133508
18. Agashe C, Kluth O, Hupkes J, Zastrow U, Rech B and Wuttig M 2004 J. Appl. Phys. 95 1911
19. Sheu J K, Lee M L, Tun C J and Lin S W 2006 Appl. Phys. Lett. 88 043506
20. Liang S and Bi X 2008 J. Appl. Phys. 104 113533
21. Minami T 2008 Thin Solid Films 516 1314
22. Jeong H Y, Lee J Y, Choi S-Y and Kim J W 2009 Appl. Phys. Lett. 95 162108
23. Yoshida C, Tsunoda K, Noshiro H and Sugiyama Y 2007 Appl. Phys. Lett. 91 223510
24. Guan W, Long S, Liu Q, Liu M and Wang W 2008 IEEE Electron Device Lett. 29 434
25. Sim H et al 2005 IEEE Electron Device Lett. 26 292
26. Li S-L, Liao Z L, Li J, Gang J L and Zheng D N 2009 J. Phys. D: Appl. Phys. 42 045411
27. Kim K M, Choi B J, Shin Y C, Choi S and Hwang C S 2007 Appl. Phys. Lett. 91 012907
28. Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
29. Shi L, Shang D, Sun J and Shen B 2009 Appl. Phys. Express 2 101602
30. Liu Q, Guan W H, Long S B, Jia R, Liu M and Chen J N 2008 Appl. Phys. Lett. 92 012117
31. Sawa A, Fujii T, Kawasaki M and Tokura Y 2004 Appl. Phys. Lett. 85 4073
32. Mandl M, Hoffman H and Kucher P 1990 J. Appl. Phys. 68 2127