Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1911-1917

  Agashe, C ^a   Kluth, O ^a   Hupkes J ^a   Zastrow, U ^a   Rech, B ^a   Wuttig, M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER MOBILITY; CHARACTERIZATION; COMPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; FREQUENCIES; HALL EFFECT; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; ZINC OXIDE;

ALUMINUM DOPED ZINC OXIDE FILMS; FILM THICKNESS; HALL EFFECT MEASUREMENT; RADIO FREQUENCY;

THIN FILMS;

EID: 1542366619     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641524     Document Type: Article

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