Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

Electrochimica Acta

Volumn 56, Issue 17, 2011, Pages 6245-6250

  Inoue, Fumihiro ^a   Shimizu, Tomohiro ^a   Yokoyama, Takumi ^a   Miyake, Hiroshi ^a   Kondo, Kazuo ^b   Saito, Takeyasu ^b   Hayashi, Taro ^b   Tanaka, Shukichi ^c   Terui, Toshifumi ^c   Shingubara, Shoso ^a  

^a KANSAI UNIVERSITY   (Japan)

^b Osaka Prefecture University   (Japan)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Au nanoparticle; Copper; Diffusion barrier; Electroless plating; Through Si via

Indexed keywords

AU NANOPARTICLE; BARRIER LAYERS; CU LAYERS; DISPLACEMENT PLATING; ELECTROLESS; FILLING TECHNOLOGIES; HIGH ASPECT RATIO; SEED LAYER; SILANE COUPLING AGENT; THIN BARRIERS; THROUGH-SI VIA;

ADSORPTION; CATALYSTS; COUPLING AGENTS; ELECTROLESS PLATING; GOLD; GOLD COATINGS; NANOPARTICLES; SILANES; SILICON; SILICON COMPOUNDS; TUNGSTEN;

ASPECT RATIO;

EID: 79958785670     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2011.02.078     Document Type: Article

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