High speed through silicon via filling by copper electrodeposition

Electrochemical and Solid-State Letters

Volumn 13, Issue 5, 2010, Pages

  Kondo, Kazuo ^a   Suzuki, Yushi ^a   Saito, Takeyasu ^a   Okamoto, Naoki ^a   Takauchi, Minoru ^a,b  

^a Osaka Prefecture University   (Japan)

^b Specialty Chemical Div   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM CHLORIDE; COPPER ELECTRODEPOSITION; CROSS SECTION; HIGH THROUGHPUT; MICRO-CONTACT; OFF TIME; THROUGH-SILICON-VIA; TOP SURFACE; V SHAPE; VIA FILLING;

AMMONIUM COMPOUNDS; CHLORINE COMPOUNDS; COPPER; PRINTING;

ELECTRODEPOSITION;

EID: 77949740358     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3313451     Document Type: Article

References (8)

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