Texture of atomic layer deposited ruthenium

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1879-1883

  Musschoot, J ^a   Xie, Q ^b   Deduytsche, D ^a   De Keyser, K ^a   Longrie, D ^a   Haemers, J ^a   Van Den Berghe, S ^c   Van Meirhaeghe, R L ^a   D'Haen, J ^d   Detavernier, C ^a  

^a GHENT UNIVERSITY   (Belgium)

^b FUDAN UNIVERSITY   (China)

^c BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

^d HASSELT UNIVERSITY   (Belgium)

Author keywords

Ammonia plasma; Atomic layer deposition; Ruthenium; Silicide; Texture

Indexed keywords

AMMONIA; ANNEALING; ATOMS; DEPOSITION; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; RUTHENIUM; SILICIDES; SILICON; TEXTURES; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AMMONIA PLASMA; AS-DEPOSITED FILMS; ATOMIC LAYER DEPOSITED; ELECTRON BACK SCATTER DIFFRACTION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; REACTION BARRIERS; RUTHENIUM FILMS; THICKNESS OF THE FILM;

ATOMIC LAYER DEPOSITION;

EID: 84859921175     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.020     Document Type: Article

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