GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(1 1 1) by molecular beam epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 418-421

  Dogan, Pinar ^a   Brandt, Oliver ^a   Pfüller, Carsten ^a   Bluhm, Anne Kathrin ^a   Geelhaar, Lutz ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

GaN on Si; Molecular beam epitaxy; Nanowires; Pendeoepitaxy

Indexed keywords

GAN NANOWIRES; GAN-ON-SI; LENGTH DISTRIBUTIONS; PENDEO-EPITAXY; SI (1 1 1); SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

COALESCENCE;

EID: 79957990656     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.081     Document Type: Article

References (22)

1. A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost J. Cryst. Growth 297 2 2006 279 282
2. H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U.K. Mishra, J.S. Speck, S.P. DenBaars, and J.A. Freitas J. Appl. Phys. 89 12 2001 7846 7851
3. E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, P. Gibart, T. Riemann, J. Christen, L. Dobos, and B. Pécz J. Appl. Phys. 93 1 2003 182 185
4. K. Kusakabe, A. Kikuchi, and K. Kishino Jpn. J. Appl. Phys. 40 3A 2001 L192 L194
5. L. Meshi, D. Cherns, I. Griffiths, S. Khongphetsak, A. Gott, C. Liu, S. Denchitcharoen, P. Shields, W. Wang, R. Campion, S. Novikov, and T. Foxon Phys. Status Solidi C 5 6 2008 1645
6. D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S.V. Novikov, N. Farley, R.P. Campion, and C.T. Foxon Appl. Phys. Lett. 92 12 2008 121902
7. C.L. Chao, C.H. Chiu, Y.J. Lee, H.C. Kuo, P.-C. Liu, J.D. Tsay, and S.J. Cheng Appl. Phys. Lett. 95 5 2009 051905
8. Q. Li, Y. Lin, J.R. Creighton, J.J. Figiel, and G.T. Wang Adv. Mater. 21 23 2009 2416
9. T.-Y. Tang, W.-Y. Shiao, C.-H. Lin, K.-C. Shen, J.-J. Huang, S.-Y. Ting, T.-C. Liu, C.C. Yang, C.-L. Yao, J.-H. Yeh, T.-C. Hsu, W.-C. Chen, H.-C. Hsu, and L.-C. Chen J. Appl. Phys. 105 2 2009 023501
10. Y.-S. Chen, W.-Y. Shiao, T.-Y. Tang, W.-M. Chang, C.-H. Liao, C.-H. Lin, K.-C. Shen, C.C. Yang, M.-C. Hsu, J.-H. Yeh, and T.-C. Hsu J. Appl. Phys. 106 2 2009 023521
11. T.-Y. Tang, C.-H. Lin, Y.-S. Chen, W.-Y. Shiao, W.-M. Chang, C.-H. Liao, K.-C. Shen, C.-C. Yang, M.-C. Hsu, J.-H. Yeh, and T.-C. Hsu IEEE Trans. Electron Devices 57 1, Sp. Iss. SI 2010 71 78
12. D. Cherns, L. Meshi, I. Griffiths, S. Khongphetsak, S.V. Novikov, R.P. Campion, C.T. Foxon, C. Liu, P. Shields, and W.N. Wang J. Phys. Conf. Ser. 209 2010 012001
13. Z. Bougrioua, P. Gibarta, E. Calleja, U. Jahn, A. Trampert, J. Ristic, M. Utrera, and G. Nataf J. Cryst. Growth 309 2 2007 113 120
14. K. Kato, K. Kishino, H. Sekiguchi, and A. Kikuchi J. Cryst. Growth 311 10 2009 2956 2961
15. T.H. Yang, J.T. Ku, J.-R. Chang, S.-G. Shen, Y.-C. Chen, Y.Y. Wong, W.C. Chou, C.-Y. Chen, and C.-Y. Chang J. Cryst. Growth 311 7 2009 1997 2001
16. J.-T. Ku, T.-H. Yang, J.-R. Chang, Y.-Y. Wong, W.-C. Chou, C.-Y. Chang, and C.-Y. Chen Jpn. J. Appl. Phys. 49 4, Part 2 Sp. Iss. SI 2010 04DH06
17. V. Consonni, M. Knelangen, U. Jahn, A. Trampert, L. Geelhaar, and H. Riechert Appl. Phys. Lett. 95 24 2009 241910
18. K. Kornitzer, T. Ebner, M. Grehl, K. Thonke, R. Sauer, C. Kirchner, V. Schwegler, M. Kamp, M. Leszczynski, I. Grzegory, and S. Porowski Phys. Status Solidi B 216 1 1999 5 9
19. O. Brandt, C. Pfüller, C. Cheze, L. Geelhaar, and H. Riechert Phys. Rev. B 81 4 2010 045302
20. L.E. Jensen, M.T. Björk, S. Jeppesen, A.I. Persson, B.J. Ohlsson, and L. Samuelson Nano Lett. 4 10 2004 1961 1964
21. E. Calleja, M. Sanchez-Garcia, F. Sanchez, F. Calle, F. Naranjo, E. Munoz, S. Molina, A. Sanchez, F. Pacheco, and R. Garcia J. Cryst. Growth 201 1999 296 317
22. A. Dadgar, M. Poschenrieder, A. Reiher, J. Blasing, J. Christen, A. Krtschil, T. Finger, T. Hempel, A. Diez, and A. Krost Appl. Phys. Lett. 82 1 2003 28 30