The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1645-1647

  Meshi, L ^a   Cherns, D ^a   Griffiths, I ^a   Khongphetsak, S ^a   Gott, A ^b   Liu, C ^b   Denchitcharoen, S ^b   Shields, P ^b   Wang, W ^b   Campion, R ^c   Novikov, S ^c   Foxon, T ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b University of Bath   (United Kingdom)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION ANNIHILATION; DISLOCATION TYPE; EPITAXIAL LATERAL OVERGROWTH; GAN FILM; LATERAL MIGRATION; MOCVD; NANO-COLUMNS; NANOCOLUMN; SELF-ORGANISED; THREADING DISLOCATION; UNIFORM LAYER;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALLIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

EID: 77950479538     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778562     Document Type: Conference Paper

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