Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

Applied Physics Letters

Volumn 95, Issue 5, 2009, Pages

  Chao, C L ^a,b   Chiu, C H ^b   Lee, Y J ^b   Kuo, H C ^a,b   Liu, Po Chun ^a   Tsay, Jeng Dar ^a   Cheng, S J ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC QUALITY; FREESTANDING GAN SUBSTRATES; GAN CRYSTALS; GAN NANORODS; GAN SUBSTRATE; GROWTH TEMPLATE; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; RESIDUAL STRAINS; SAPPHIRE SUBSTRATES; SILICON DIOXIDE; THERMAL STRAIN;

COALESCENCE; CORUNDUM; CRYSTAL GROWTH; GALLIUM NITRIDE; NANORODS; PASSIVATION; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICA; SILICON OXIDES; STRAIN; SUBSTRATES; VAPORS;

GALLIUM ALLOYS;

EID: 68349130290     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195684     Document Type: Article

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