GaN devices based on nanorods

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Cherns, D ^a   Meshi, L ^a   Griffiths, I ^a   Khongphetsak, S ^a   Novikov, S V ^b   Campion, R P ^b   Foxon, C T ^b   Liu, C ^c   Shields, P ^c   Wang, W N ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NANORODS; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY;

DISPLACEMENT VECTORS; GA-RICH CONDITIONS; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NANOROD LAYERS; RICH CONDITIONS; SELF-ORGANISED; SPIRAL GROWTH; THREADING DEFECTS;

DEFECT DENSITY;

EID: 77950511941     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012001     Document Type: Conference Paper

References (6)

1. Liliental-Weber Z and Cherns D 2001 J. Appl. Phys. 89 7833
2. Calleja E et al. 2007 Phys. Status Solidi b 244 2816
3. Cherns D et al. 2008 Appl. Phys. Lett. 92 121902
4. Cherns D et al. 2008 Appl. Phys. Lett. 93 111911
5. Tanaka S et al. 1995 Appl. Phys. Lett. 66 37
6. Meshi L et al. 2008 Phys. Stat. Sol. (c) 5 1645