EUV flare and proximity modeling and model-based correction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Zuniga, Christian ^a   Habib, Mohamed ^a   Word, James ^a   Lorusso, Gian F ^b   Hendrickx, Eric ^b   Baylav, Burak ^b   Chalasani, Raghu ^a   Lam, Michael ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

^b IMEC   (Belgium)

Author keywords

EUV; flare; model; OPC; shadowing

Indexed keywords

DATA VOLUME; DIMENSIONAL VARIATIONS; EUV; EUV LITHOGRAPHY; FLARE; MODEL BASED APPROACH; MODEL-BASED; MODEL-BASED OPC; MOORE'S LAW; ON-WAFER; OPC; OPC ACCURACY; PROJECTION OPTICS; PROXIMITY EFFECTS; SCATTERED LIGHT; SEMICONDUCTOR FABRICATION PROCESS; SHADOWING; TECHNOLOGY NODES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

LITHOGRAPHY;

EID: 79957940348     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879488     Document Type: Conference Paper

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