Full chip correction of EUV design

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Lorusso, G F ^a   Hendrickx, E ^a   Fenger, G L ^b   Niroomand, A ^c  

^a IMEC   (Belgium)

^b MENTOR GRAPHICS CORPORATION   (United States)

^c MICRON TECHNOLOGY INC   (United States)

Author keywords

EUV; flare; OPC; scanner; shadowing effect

Indexed keywords

193-NM LITHOGRAPHY; ADVANCED MANUFACTURING; BIAS CORRECTION; CD MEASUREMENTS; DATA SETS; ELECTRONIC DESIGN AUTOMATION; EUV MASK; FEASIBILITY STUDIES; FEATURE SIZES; FULLY INTEGRATED; MODEL CALIBRATION; MODEL CALIBRATION AND VALIDATION; OPC MODELS; OPTICAL CORRECTIONS; OPTICAL PROXIMITY CORRECTIONS; PRE-PRODUCTION; SHADOWING EFFECTS; SHIN-ETSU; SPECIFIC EFFECTS; THROUGH PITCH; TWO-DIMENSIONAL STRUCTURES; WAFER LEVEL;

CALIBRATION; COMPUTER AIDED DESIGN; MASKS; NANOTECHNOLOGY; PHOTORESISTS; SCANNING;

DATA STORAGE EQUIPMENT;

EID: 77953385575     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846966     Document Type: Conference Paper

References (9)

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