Requirements and results of a full-field EUV OPC flow

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7271, Issue , 2009, Pages

  Jang, Stephen ^a   Zavyalova, Lena ^a   Ward, Brian ^a   Lucas, Kevin ^a  

^a SYNOPSYS INC   (United States)

Author keywords

3D mask effects; EUV; EUV resist modeling; Flare; OPC; Shadowing

Indexed keywords

3D MASK EFFECTS; EUV; EUV RESIST MODELING; FLARE; OPC; SHADOWING;

LOGIC DEVICES; MASKS; OPTIMIZATION; SCANNING; THREE DIMENSIONAL; ULTRAVIOLET DEVICES;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 67149124054     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.815255     Document Type: Conference Paper

References (4)

1. J. Cobb, et al. Proc. of EUV Symposium, Antwerp, 2003.
2. I. Kim et al. Microelectronic Eng. (2008), doi:10.1016/j.mee.2008.01.098
3. L. Zavyalova, presented at 2008 International workshop of EUV Lithography, May, 2008.
4. T. Kozawa et. al., Appl. Phys. Express, 1, 2008, 027001