Accurate models for EUV Lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7488, Issue , 2009, Pages

  Hendrickx, Eric ^a   Lorusso, Gian F ^a   Jiang, Jiong ^b   Chen, Luoqi ^b   Lui, Wei ^b   Van Setten, Eelco ^c   Hansen, Steve ^d  

^a IMEC   (Belgium)

^b Brion Technologies Inc   (United States)

^c ASML   (Netherlands)

^d ASML US Inc   (United States)

Author keywords

CD uniformity; EUV Lithography; OPC model; Resist model

Indexed keywords

ACCURATE MODELING; CD MEASUREMENTS; CD UNIFORMITY; CD VARIATION; DATA SETS; EXPERIMENTAL MEASUREMENTS; EXPOSURE TOOL; FOCAL PLANE; FULL-FIELD; IMAGING EFFECTS; MODELING INFRASTRUCTURES; ON-WAFER; OPC MODELS; OPTICAL MODELS; PROCESS WINDOW; RESIST MODELS;

EXTREME ULTRAVIOLET LITHOGRAPHY; OPTICAL INSTRUMENTS; PHOTOMASKS; TECHNOLOGY;

LITHOGRAPHY;

EID: 79551646616     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.829987     Document Type: Conference Paper

References (6)

1. Hendrickx, E.; Goethals, M.; Niroomand, A.; Jonckheere, R.; Van Roey, F.; Lorusso, G.; Hermans, J.; Baudemprez, B. and Ronse, K. "Full field EUV lithography: lessons learnt on EUV ADT imaging, EUV resist, and EUV reticles" SPIE Taiwan (2008), Vol 7140.
2. Hermans, J.; Baudemprez, B.; Lorusso, G.; Hendrickx, E.; van Dijk, A.; Jonckheere, R. and Goethals, M. "Stability and imaging of the ASML EUV Alpha Demo Tool" SPIE (2009), Vol 7271.
3. Kim, I.; Myers, A.; Melvin III, L. S.; Ward, B.; Lorusso, G.F.; Jonckheere, R.; Goethals, A. M.; Ronse, R., "Flare mitigation strategies in extreme ultraviolet lithography", Microelectronic Engineering 85, 5-6, 738-743 (2008).
4. Myers, A. M.; Lorusso, G. F.; Kim, I.; Goethals, A. M.; Jonckheere, R.; Hermans, J.; Baudemprez, B.; Ronse K., "Experimental validation of full-field extreme ultraviolet lithography flare and shadowing corrections", J. Vac. Sci. Technol. B 26(6) 2215 (2008).
5. Chandhok M.; Lee, S. H.; Krautschik, C.; Rice, B. J.; Panning, E.; GoldStein, M. and Shell M., "Determination of the Flare Specification and Methods to Meet the CD Control Requirements for the 32nm Node Using EUVL", Proc SPIE, vol 5374, 86-95 (2004).
6. Lorusso, G.F. et al., "Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy", J. Vac. Sci. Technol. B 25(6), 2127-2131 (2007). (Pubitemid 350255852)