Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As4 source

Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 82-87

  Li, X ^a   Guo, H ^a   Yin, Z ^a   Shi, T ^a   Wen, L ^a   Zhao, Z ^a   Liu, M ^a   Ma, W ^a   Wang, Y ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

A1. Growth models; A3. Molecular beam epitaxy (MBE); A3. Nanowire; B2. Semiconducting gallium arsenic

Indexed keywords

A3. MOLECULAR BEAM EPITAXY (MBE); A3. NANOWIRE; B2. SEMICONDUCTING GALLIUM ARSENIC; GAAS; GROUP III; GROWTH MODELS; GROWTH PARAMETERS; GROWTH TIME; NANOSCALE DEVICE; OPTIMAL STRATEGIES; RADIAL GROWTH;

ARSENIC; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM;

CRYSTAL STRUCTURE;

EID: 79957837445     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.004     Document Type: Article

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