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Volumn 312, Issue 14, 2010, Pages 2073-2077

Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy

Author keywords

A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nanomaterials

Indexed keywords

A3. MOLECULAR BEAM EPITAXY; ARSENIC SPECIES; AXIAL GROWTH; B1. NANOMATERIALS; DIFFUSION LENGTH; GAAS; HETEROSTRUCTURES; NANO-MATERIALS;

EID: 77955232118     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.027     Document Type: Article
Times cited : (30)

References (20)
  • 11
    • 77955231871 scopus 로고    scopus 로고
    • This contribution will be quantified more precisely in a future publication. We evaluate the diffusion from the substrate surface to the catalyst droplet as a very small contribution
    • This contribution will be quantified more precisely in a future publication. We evaluate the diffusion from the substrate surface to the catalyst droplet as a very small contribution.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.