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Volumn 312, Issue 14, 2010, Pages 2073-2077
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Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
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Author keywords
A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nanomaterials
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Indexed keywords
A3. MOLECULAR BEAM EPITAXY;
ARSENIC SPECIES;
AXIAL GROWTH;
B1. NANOMATERIALS;
DIFFUSION LENGTH;
GAAS;
HETEROSTRUCTURES;
NANO-MATERIALS;
ARSENIC;
CRYSTAL GROWTH;
GALLIUM ARSENIDE;
GROWTH KINETICS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOSTRUCTURED MATERIALS;
NANOWIRES;
SEMICONDUCTING GALLIUM;
GALLIUM ALLOYS;
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EID: 77955232118
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.027 Document Type: Article |
Times cited : (30)
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References (20)
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