Improved sensitivity of AlGaN/GaN field effect transistor biosensors by optimized surface functionalization

IEEE Sensors Journal

Volumn 11, Issue 8, 2011, Pages 1726-1735

  Wen, Xuejin ^a   Schuette, Michael L ^a   Gupta, Samit Kumar ^b   Nicholson, Theodore R ^b   Lee, Stephen Craig ^a,b   Lu, Wu ^c  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c NONE

Author keywords

Biosensor; field effect transistor (FET); GaN; surface functionalization

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; BIOLOGICAL SENSORS; ELECTRICAL PROPERTY; FIELD EFFECT TRANSISTOR BIOSENSORS; GAN; INDUCTIVELY-COUPLED; INTERFACE TRAP DENSITY; LINKER MOLECULES; OXIDATION PROCESS; OXIDIZED SURFACES; OXYGEN PLASMAS; PIRANHA SOLUTIONS; PROTEIN SENSOR; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SHEET CARRIER CONCENTRATION; STREPTAVIDIN; SURFACE FUNCTIONALIZATION; SURFACE MODIFICATION; SURFACE OXIDATIONS; WATER CONTACT ANGLE MEASUREMENT;

ANGLE MEASUREMENT; BIOSENSORS; CONTACT ANGLE; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; OXIDATION; OXIDATION RESISTANCE; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SENSORS; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE ION ETCHING;

EID: 79957694731     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2010.2095458     Document Type: Article

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