Operation of Pt/AlGaN/GaN-heterojunction field-effect-transistor hydrogen sensors with low detection limit and high sensitivity

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1193-1195

  Song, Junghui ^a   Lu, Wu ^a  

^a The Ohio State University   (United States)

Author keywords

AlGaN GaN; GaN; Gas sensors; Heterostructure field effect transistors (HFETs)

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); GALLIUM NITRIDE; HETEROJUNCTIONS; HYDROGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SENSORS; TRANSISTORS;

ALGAN/GAN; AND DETECTIONS; CATALYTIC METALS; DETECTION LIMITS; DEVICE SENSITIVITIES; DRAIN BIASES; GAN; GAS SENSORS; GATE BIASES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETS); HIGH SENSITIVITIES; HIGH TEMPERATURES; HYDROGEN SENSORS; KNEE VOLTAGES; LOW DETECTION LIMITS; SCHOTTKY DIODES; SENSITIVITY PEAKS;

FIELD EFFECT TRANSISTORS;

EID: 55149119674     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2005432     Document Type: Article

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