Self-aligned AlGaN/GaN high electron mobility transistors

Electronics Letters

Volumn 40, Issue 19, 2004, Pages 1227-1229

  Lee, J ^a   Liu, D ^a   Kim, H ^a   Schuette, M ^a   Flynn, J S ^b   Brandes, G R ^b   Lu, W ^a  

^a The Ohio State University   (United States)

^b ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; NUCLEATION; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GATE LEAKAGE CURRENTS; MAXIMUM AVAILABLE GAIN (MAG); MAXIMUM STABLE POWER GAIN (MSG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4944239082     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045939     Document Type: Article

References (5)

1. Lu, W., Kumar, V., Sehwindt, R., Finer, E., and Adesida, I.: 'DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates', IEEE Thins. Microw. Theory Tech., 2002, 50, pp. 2499-2504
2. Wu, Y.-E, Saxler, A., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, P.M., Wisleder, T., Mishra, U.K., and Parikh, P.: '30-W/mm GaN HEMTs by field plate optimization', IEEE Electron Device Lett., 2004, 25, pp. 117-119
3. Chen, C.H., Keller, S., Parish, G., Vetury, R., Kozodoy, P., Hu, E.L., Denbaars, S.P., and Mishra, U.K.: 'High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts', Appl. Phys. Lett., 1988, 73, pp. 3147-3149
4. Lee, J., Liu, D., Kim, H., and Lu, W.: 'Post annealing effects on device performance of AlGaN/GaN HFETs', Solid-State Electron., (in press)
5. Binari, S.C., Ikossi, K., Roussos, J.A., Kruppa, W., Park, D., Dietrich, H.B., Koleske, D.D., Wickenden, A.E., and Henry, R.L.: 'Trapping effects and microwave power performance in AlGaN/GaN HEMTs', IEEE Trans Electron Devices, 2001, 48, pp. 465-471