Swelling and stacking fault formation in helium implanted SiC

Journal of Nuclear Materials

Volumn 413, Issue 3, 2011, Pages 162-165

  Barbot, J F ^a   Beaufort, M F ^a   Texier, M ^b   Tromas, C ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGED ZONES; ELASTIC RECOVERY; EXTENDED DEFECT; FLUENCES; FRANK LOOPS; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; IMPLANTATION-INDUCED STRAIN; INTERMEDIATE CONDITIONS; INTERSTITIALS; LOW TEMPERATURES; PILE-UPS; POST ANNEALING; SHOCKLEY PARTIAL DISLOCATIONS; SURFACE SWELLING;

ANNEALING; HELIUM; SILICON CARBIDE; SURFACE DEFECTS;

SWELLING;

EID: 79957689779     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2011.04.022     Document Type: Article

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