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Volumn 106, Issue 12, 2009, Pages

Direct measurement of local volume change in ion-irradiated and annealed SiC

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS STATE; ATOMIC VOLUMES; DEPTH PROFILE; DIRECT MEASUREMENT; IMPLANTED SAMPLES; LOCAL DISORDER; LOCAL VOLUME CHANGE; RUTHERFORD BACK-SCATTERING SPECTROMETRY; VOLUME EXPANSION;

EID: 73849122161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3272808     Document Type: Article
Times cited : (15)

References (25)
  • 5
    • 0034833204 scopus 로고    scopus 로고
    • 0022-3093. 10.1016/S0022-3093(00)00350-1
    • C. Raynaud, J. Non-Cryst. Solids 0022-3093 280, 1 (2001). 10.1016/S0022-3093(00)00350-1
    • (2001) J. Non-cryst. Solids , vol.280 , pp. 1
    • Raynaud, C.1
  • 20
    • 0039436823 scopus 로고    scopus 로고
    • Atomic scale simulation of defect production in irradiated 3C-SiC
    • DOI 10.1063/1.1389523
    • R. Devanathan, W. J. Weber, and F. Gao, J. Appl. Phys. 0021-8979 90, 2303 (2001). 10.1063/1.1389523 (Pubitemid 33600645)
    • (2001) Journal of Applied Physics , vol.90 , Issue.5 , pp. 2303-2309
    • Devanathan, R.1    Weber, W.J.2    Gao, F.3
  • 24
    • 0141854175 scopus 로고    scopus 로고
    • 0884-2914. 10.1557/JMR.2003.0262
    • F. Gao and W. J. Weber, J. Mater. Res. 0884-2914 18, 1877 (2003). 10.1557/JMR.2003.0262
    • (2003) J. Mater. Res. , vol.18 , pp. 1877
    • Gao, F.1    Weber, W.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.