Ion-irradiation-induced athermal annealing of helium bubbles in SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 14, 2010, Pages 2325-2328

  Hua, Wei ^a   Yao, Shu De ^a   Theodore, N David ^b   Wang, Xue Mei ^c   Chu, Wei Kan ^c   Martin, Michael ^d   Shao, Lin ^d  

^a PEKING UNIVERSITY   (China)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c University of Houston   (United States)

^d Department of Electrical and Computer Engineering   (United States)

Author keywords

Athermal annealing; He bubbles; Ion irradiation; Silicon carbide

Indexed keywords

A-THERMAL; ATHERMAL ANNEALING; BEFORE AND AFTER; FLUENCES; HE BUBBLES; HELIUM BUBBLES; HIGH-TEMPERATURE ANNEALING; ION IRRADIATION; MICROSTRUCTURAL CHANGES; OSTWALD RIPENING PROCESS; ROOM TEMPERATURE; TO EFFECT;

HELIUM; IONS; IRRADIATION; OSTWALD RIPENING; RADIATION; SILICON CARBIDE;

ANNEALING;

EID: 77953131480     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.04.004     Document Type: Article

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