Atomistic modeling of finite-temperature properties of crystalline β-SiC II. Thermal conductivity and effects of point defects

Journal of Nuclear Materials

Volumn 255, Issue 2-3, 1998, Pages 139-152

  Li, Ju ^a   Porter, Lisa ^a,b   Yip, Sidney ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b INSTITUTE FOR DEFENSE ANALYSES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; NEUTRON IRRADIATION; POINT DEFECTS; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; THERMAL EXPANSION; THERMODYNAMIC PROPERTIES;

CRYSTALLINE BETA SILICON CARBIDE; GREEN-KUBO EXPRESSION;

SILICON CARBIDE;

EID: 0032099753     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(98)00034-8     Document Type: Article

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