Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature

Journal of Nuclear Materials

Volumn 397, Issue 1-3, 2010, Pages 132-134

  Leclerc, S ^a,b   Beaufort, M F ^a   Declemy A ^a   Barbot, J F ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b CNRS CEMHTI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGED REGION; DYNAMIC ANNEALING; EFFECTS OF TEMPERATURE; ELEVATED TEMPERATURE; FLUENCES; HELIUM ION; HIGHLY STRAINED; INTERSTITIAL ATOMS; NEAR SURFACE REGIONS; STRAIN GRADIENTS; X-RAY DIFFRACTION MEASUREMENTS;

HELIUM; POINT DEFECTS; SILICON CARBIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE;

EID: 75149162784     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2009.12.011     Document Type: Letter

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